Product Details

• Product: IRF9Z34
• Transistor type: MOSFET
• Control channel: P-Channel
• No of pins: 3
• Package: TO-220
• Mounting type: through hole
• Package contains: 1 x IRF9Z34 60V 18A P-Channel Power MOSFET

Features

Dynamic dv/dt capability

Advanced process technology

 Fully avalanche rated

Fast switching

175? operating temperature

Specification

Drain-source voltage: -55V

Drain-gate voltage: -55V

Gate-source voltage: �20V

Continuous drain current:

At 25?: -19A

At 100?: -14A

Pulsed drain current: -68

Maximum avalanche current: -10A

Gate threshold voltage: -2V to -4V

Drain-to-source leakage current: -25�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 55nS

Fall time: 41nS

Turn-on delay time: 13nS

Turn-off delay time: 30nS

Diode forward voltage: -1.6V

Reverse recovery time: 54ns to 82ns

Reverse recovery charge: 110nC to 160nC

Maximum power dissipation: 68W

Operating temperature: -55? to 175?