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Product Details
Features
Dynamic dv/dt capability
Advanced process technology
Fully avalanche rated
Fast switching
175? operating temperature
Specification
Drain-source voltage: -100V
Drain-gate voltage: -100V
Gate-source voltage: �20V
Continuous drain current:
At 25?: -6.8A
At 100?: -4.8A
Pulsed drain current: -27A
Maximum avalanche current: -4A
Gate threshold voltage: -2V to -4V
Drain-to-source leakage current: -25�A
Gate-to-source forward leakage: -100nA
Gate-to-source reverse leakage: 100nA
Rise time: 47nS
Fall time: 31nS
Turn-on delay time: 14nS
Turn-off delay time: 28nS
Diode forward voltage: -1.6V
Reverse recovery time: 100ns to 150ns
Reverse recovery charge: 420nC to 630nC
Maximum power dissipation: 48W
Operating temperature: -55? to 175?
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