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Product Details
Features
<li>Dynamic dv/dt capability
<li>Fully avalanche rated
<li>Advanced process technology
<li>Fast switching
<li>Ease of paralleling
<li>Simple drive requirement
<li>175? operating temperature
Specification
<li>Drain-source voltage: 200V
<li>Drain-gate voltage: 200V
<li>Gate-source voltage: �20V
<li>Continuous drain current:
<li>At 25?: 18A
<li>At 100?: 13A
<li>Pulsed drain current: 72A
<li>Maximum avalanche current: 18A
<li>Gate threshold voltage: 2V to 4V
<li>Drain-to-source leakage current: 25�A
<li>Gate-to-source forward leakage: 100nA
<li>Gate-to-source reverse leakage: -100nA
<li>Rise time: 19nS
<li>Fall time: 5.5nS
<li>Turn-on delay time: 10nS
<li>Turn-off delay time: 23nS
<li>Diode forward voltage: 1.3V
<li>Reverse recovery time: 167ns to 257ns
<li>Reverse recovery charge: 929nC to 1394nC
<li>Maximum power dissipation: 150W
<li>Operating temperature: -55? to 175?
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