Product Details

• Product: IRF5305
• Transistor type: MOSFET
• Control channel: P-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF5305 55V 31A P-Channel Power MOSFET

Features

Dynamic dv/dt capability

Advanced process technology

Fully avalanche rated

Fast switching

175? operating temperature

Specification

Drain-source voltage: -55V

Drain-gate voltage: -55V

Gate-source voltage: �20V

Continuous drain current:

At 25?: -31A

At 100?: -22A

Pulsed drain current: -110A

Maximum avalanche current: -16A

Gate threshold voltage: -2V to -4V

Drain-to-source leakage current: ?25�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 66nS

Fall time: 63nS

Turn-on delay time: 14nS

Turn-off delay time: 39nS

Diode forward voltage: -1.3V

Reverse recovery time: 71ns to 110ns

Reverse recovery charge: 170nC to 250nC

Maximum power dissipation: 110W

Operating temperature: -55? to 175?

SKU:BEC0310 ,Categories:Basic Components Elec