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Product Details
Features
Dynamic dv/dt capability
Advanced process technology
Fully avalanche rated
Ultra low on-resistance
Fast switching
175? operating temperature
Specification:
Drain-source voltage: -55V
Drain-gate voltage: -55V
Gate-source voltage: �20v
Continuous drain current:
At 25?: -74A
At 100?: -52A
Pulsed drain current: -260A
Maximum avalanche current: -38A
Gate threshold voltage: -2V to -4V
Drain-to-source leakage current: ? 25�A
Gate-to-source forward leakage: 100nA
Gate-to-source reverse leakage: -100nA
Rise time: 99nS
Fall time: 96nS
Turn-on delay time: 18nS
Turn-off delay time: 61nS
Diode forward voltage: -1.36
Reverse recovery time: 89ns to 130ns
Reverse recovery charge: 230nC to 350nC
Maximum power dissipation: 200W
Operating temperature: -55? to 175?
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