Product Details

• Product: IRF3710
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF3710 100V 57A N-Channel Power MOSFET

Features

Dynamic dv/dt capability

Fully avalanche rated

Advanced process technology

Fast switching

175? operating temperature

Specification

Drain-source voltage: 100V

Drain-gate voltage: 100V

Gate-source voltage: �20V

Continuous drain current:

At 25?: 57A

At 100?: 40A

Pulsed drain current: 230A

Maximum avalanche current: 28A

Gate threshold voltage: 2V to 4V

Drain-to-source leakage current: 25�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 58nS

Fall time: 47nS

Turn-on delay time: 12nS

Turn-off delay time: 45nS

Diode forward voltage: 1.2V

Reverse recovery time: 140ns to 220ns

Reverse recovery charge: 670nC to 1010nC

Maximum power dissipation: 200W

Operating temperature: -55? to 175?