IRFBE30 800V 4.1A N-Channel Power MOSFET

Product Details

• Product: IRFBE30
• Transistor type: MOSFET
• Control channel: N-channel
• No of pins: 3
• Package: TO-220
• Mounting type: through hole
• Package contains: 1 x IRFBE30 800V 4.1A N-Channel Power MOSFET

Features

High dv/dt capability

Repetitive avalanche rated

Very low intrinsic capacitance

Gate charge minimized

Fast switching

Ease of paralleling

Simple drive requirement

Specification

Drain-source voltage: 800V

Drain-gate voltage: 800V

Gate-source voltage: �20V

Continuous drain current:

At 25?: 4.1A

At 100?: 2.6A

Pulsed drain current: 16A

Repetitive avalanche current: 4.1A

Maximum power dissipation: 125W

Operating temperature: -55? to 150?

Application

High current high-speed switching

<li>Switch mode power supply (SMPS)

DC-AC converters for power supply and motor driver

Product Details

Product: IRFBE30

Transistor type: MOSFET

Control channel: N-channel

No of pins: 3

Package: TO-220

Mounting type: through hole

Package contains: 1 x IRFBE30 800V 4.1A N-Channel Power MOSFET

BEC0333n - Category - MOSFET