IRF640 200V 18A N-Channel Power MOSFET

Product Details

• Product: IRF640
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF640 200V 18A N-Channel Power MOSFET

Features

<li>Dynamic dv/dt capability

<li>Fully avalanche rated

<li>Advanced process technology

<li>Fast switching

<li>Ease of paralleling

<li>Simple drive requirement

<li>175? operating temperature

Specification

<li>Drain-source voltage: 200V

<li>Drain-gate voltage: 200V

<li>Gate-source voltage: �20V

<li>Continuous drain current:

<li>At 25?: 18A

<li>At 100?: 13A

<li>Pulsed drain current: 72A

<li>Maximum avalanche current: 18A

<li>Gate threshold voltage: 2V to 4V

<li>Drain-to-source leakage current: 25�A

<li>Gate-to-source forward leakage: 100nA

<li>Gate-to-source reverse leakage: -100nA

<li>Rise time: 19nS

<li>Fall time: 5.5nS

<li>Turn-on delay time: 10nS

<li>Turn-off delay time: 23nS

<li>Diode forward voltage: 1.3V

<li>Reverse recovery time: 167ns to 257ns

<li>Reverse recovery charge: 929nC to 1394nC

<li>Maximum power dissipation: 150W

<li>Operating temperature: -55? to 175?