IRF530 100V 17A N-Channel Power MOSFET

Product Details

• Product: IRF530
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF530 100V 17A N-Channel Power MOSFET

Feature:

Dynamic dv/dt capability

Advanced process technology

Ultra low on-resistance 

Fully avalanche rated

Fast switching

175? operating temperature

Specification

Drain-source voltage: 100V

Drain-gate voltage: 100V

Gate-source voltage: �20V

Continuous drain currentl

At 25?: 17A

At 100?: 12A

Pulsed drain current: 60A

Maximum avalanche current: 9A

Gate threshold voltage: 2V to 4V

Drain-to-source leakage current: 25�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 22nS

Fall time: 25nS

Turn-on delay time: 9.2nS

Turn-off delay time: 35nS

Diode forward voltage: 1.3V

Reverse recovery time: 93ns to 140ns

Reverse recovery charge: 320nC to 480nC

Maximum power dissipation: 70W

Operating temperature: -55? to 175?