2N3055 NPN Switching and High Power Amplifier Transistor

Product Details

• Product: 2N3055 Transistor
• Polarity: NPN
• Mounting type: through hole
• Package type: TO-204AA (TO-3)
• Case: 1-07 (Style1)
• Package contains: 1 x 2N3055 NPN Switching and High Power Amplifier Transistor

2N3055 is a silicon NPN transistor designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process mounted in a hermetically sealed metal case. This is a current control device in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear.

Features

Current controlled device

Medium power transistor

Linear gain

The excellent safe operating area

Complementary NPN-NPN transistor

The low collector-emitter saturation voltage

Specification

Collector-emitter voltage: 60V DC

Collector-base voltage: 100V Dc

Emitter-base voltage: 7V DC

Maximum continuous collector current: 15A DC

Maximum base current: 7A DC

Collector cutoff current: 0.7mA to 5mA

 Emitter cutoff current: 5mA

DC current gain (hFE): 20 to 70

Total power dissipation: 115W

Operating temperature: -65? to +200?

Application

Power switching and amplifier circuit

PWM or motor control applications

Regulator circuits

Signal amplifiers