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Product Details
Features
Dynamic dv/dt capability
Advanced process technology
Fully avalanche rated
Fast switching
Specification
Drain-source voltage: 100V
Drain-gate voltage: 100V
Gate-source voltage: �20V
Continuous drain current :-
At 25?: 180A
At 100?: 130A
Pulsed drain current: 670A
Gate threshold voltage: 2V to 4V
Drain-to-source leakage current: 20�A
Gate-to-source forward leakage: 100nA
Gate-to-source reverse leakage: -100nA
Rise time: 67nS
Fall time: 88nS
Turn-on delay time: 25ns
Turn-off delay time: 78ns
Diode forward voltage: 1.3V
Reverse recovery time: 50ns to 90ns
Reverse recovery charge: 94nC to 140nC
Reverse recovery current: 3.5A
Maximum power dissipation: 370W
Operating temperature: -55? to 175?
Application
Motion control application
High efficiency synchronous rectification in SMPS
Uninterrupted power supply
Hard switched and high frequency circuits
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