IRFB4110 100V 180A N-Channel Power MOSFET

Product Details

• Product: IRFB4110
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRFB4110 100V 180A N-Channel Power MOSFET

Features

Dynamic dv/dt capability

 Advanced process technology

Fully avalanche rated

Fast switching

Specification

Drain-source voltage: 100V

Drain-gate voltage: 100V

Gate-source voltage: �20V

Continuous drain current :-

At 25?: 180A

At 100?: 130A

Pulsed drain current: 670A

Gate threshold voltage: 2V to 4V

Drain-to-source leakage current: 20�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 67nS

Fall time: 88nS

Turn-on delay time: 25ns

Turn-off delay time: 78ns

Diode forward voltage: 1.3V

Reverse recovery time: 50ns to 90ns

Reverse recovery charge: 94nC to 140nC

Reverse recovery current: 3.5A

Maximum power dissipation: 370W

Operating temperature: -55? to 175?

Application

Motion control application

High efficiency synchronous rectification in SMPS

Uninterrupted power supply

Hard switched and high frequency circuits