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Product Details
Features
Dynamic dv/dt capability
Fully avalanche rated
Ultra low on-resistance
Advanced process technology
Fast switching
175? operating temperature
Specification
Drain-source voltage: 55V
Drain-gate voltage: 55V
Gate-source voltage: �20V
Continuous drain current:
At 25?: 169A
At 100?: 118A
Pulsed drain current: 680A
Gate threshold voltage: 2V to 4V
Drain-to-source leakage current: 20�A
Gate-to-source forward leakage: 200nA
Gate-to-source reverse leakage: -200nA
Rise time: 190nS
Fall time: 110nS
Turn-on delay time: 13nS
Turn-off delay time: 130nS
Diode forward voltage: 1.3V
Reverse recovery time: 88ns to 130ns
Reverse recovery charge: 250nC to 380nC
Maximum power dissipation: 330W
Operating temperature: -55? to 175?
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