Product Details

• Product: IRF1405
• Transistor type: MOSFET
• Control channel: N-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF1405 -55V 169A N-Channel Power MOSFET

Features

Dynamic dv/dt capability

Fully avalanche rated

Ultra low on-resistance

Advanced process technology

Fast switching

175? operating temperature

Specification

Drain-source voltage: 55V

Drain-gate voltage: 55V

Gate-source voltage: �20V

Continuous drain current:

At 25?: 169A

At 100?: 118A

Pulsed drain current: 680A

Gate threshold voltage: 2V to 4V

Drain-to-source leakage current: 20�A

Gate-to-source forward leakage: 200nA

Gate-to-source reverse leakage: -200nA

Rise time: 190nS

Fall time: 110nS

Turn-on delay time: 13nS

Turn-off delay time: 130nS

Diode forward voltage: 1.3V

Reverse recovery time: 88ns to 130ns

Reverse recovery charge: 250nC to 380nC

Maximum power dissipation: 330W

Operating temperature: -55? to 175?