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Product details
BS170 is an N-Channel Metal-Oxide-Semiconductor-Field-Effect-Transistor or MOSFET. It has a TO-92 package with 200V and 250mA ratings. Its synonym is Metal-Insulated-Semiconductor-Field-Effect-Transistor or MISFET.
Specification
Drain-source voltage: 200V
Continuous gate-source voltage: �20
Continuous drain current: 250mA
Pulsed drain current: 500mA
Power dissipation: 350mW
Typical turn-on time: 6 to 15 ns
Typical turn-off time: 12 to 15 ns
Application
Switching and amplification
Instruction
Exceeding the maximum limit of rating may damage the device
Power dissipation of the device may result in lower continuous drain current
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