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Product Details
2N3055 is a silicon NPN transistor designed for general purpose switching and amplification applications. It is manufactured with the epitaxial base process mounted in a hermetically sealed metal case. This is a current control device in which a small current at the base controls a large amount of current at emitter and collector side. It also can be used in audio power amplifiers as it has a good amplifying factor and gain is almost linear.
Features
Current controlled device
Medium power transistor
Linear gain
The excellent safe operating area
Complementary NPN-NPN transistor
The low collector-emitter saturation voltage
Specification
Collector-emitter voltage: 60V DC
Collector-base voltage: 100V Dc
Emitter-base voltage: 7V DC
Maximum continuous collector current: 15A DC
Maximum base current: 7A DC
Collector cutoff current: 0.7mA to 5mA
Emitter cutoff current: 5mA
DC current gain (hFE): 20 to 70
Total power dissipation: 115W
Operating temperature: -65? to +200?
Application
Power switching and amplifier circuit
PWM or motor control applications
Regulator circuits
Signal amplifiers
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