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Product Details
25N120 is a high voltage and high current IGBT and can switch up to 1200V and 50A current. It is manufactured with NPT (Non Punch Through) trench technology because of that it has very low switching loss and low saturation voltage that makes it compatible to use in low voltage switching driver designs and get comparatively high efficiency for its switching range. It has a very low gate saturation gate voltage of 2V that makes it suitable to use in low voltage side drivers design. This IGBT is perfect for resonant and soft-switching applications like induction heating microwave oven etc.
Features
NPT trench technology
Positive temperature coefficient
Superior conduction and switching performance high avalanche ruggedness and easy parallel operation
High voltage and current device
Can handle current spike up to 90A
Low switching loss and saturation voltage
Specification
Collector-emitter voltage: 1200V
Gate-emitter voltage: �20V
Minimum gate-emitter threshold voltage: 3.5V
Maximum gate-emitter threshold voltage: 7.5V
Typical gate-emitter threshold voltage: 5.5V</li>
Collector to emitter saturation voltage: 2V to 2.65V (vary with temperature current and voltage conditions)
Collector current
At 25?: 50V
At 50?: 25V
Maximum pulsed collector current: 90A
Diode continuous forward current: 25A
Diode maximum forward current: 150A
Collector cut-off current: 3mA
Gate-emitter leakage current: �250nA
Rise time: 60ns
Fall time: 100ns
Storage and operating temperature: -55? to 150V
Application
High current and voltage switching application
Resonant and soft switching applications like induction heating microwave oven etc
Tesla coils
Inverter and converter circuits
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