Product Details

• Product: IRF9630
• Transistor type: MOSFET
• Control channel: P-Channel
• No of pins: 3
• Package: TO-220AB
• Mounting type: through hole
• Package contains: 1 x IRF9630 200V 6.5A P-Channel Power MOSFET

Features

Dynamic dv/dt capability

Advanced process technology

Repetitive avalanche rated

Fast switching

Ease of paralleling

Simple drive requirement

Specification

Drain-source voltage: -200V

Drain-gate voltage: -200V

Gate-source voltage: �20V

Continuous drain current:

At 25?: -6.5A

At 100?: -4A

Pulsed drain current: -26A

Maximum avalanche current: -6.4A

Gate threshold voltage: -2V to -4V

Drain-to-source leakage current: -100�A

Gate-to-source forward leakage: 100nA

Gate-to-source reverse leakage: -100nA

Rise time: 27nS

Fall time: 24nS

Turn-on delay time: 12nS

Turn-off delay time: 28nS

Diode forward voltage: -6.5V

Reverse recovery time: 200ns to 300ns

Reverse recovery charge: 1.9�C to 2.9�C

Maximum power dissipation: 74W

Operating temperature: -55? to 150?